中国物理B ›› 2013, Vol. 22 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/22/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

刘少卿, 杨晓红, 刘宇, 李彬, 韩勤   

  1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2013-02-06 修回日期:2013-03-22 出版日期:2013-08-30 发布日期:2013-08-30
  • 基金资助:
    Project supported by the High Technology Research and Development Program of China (Grant Nos. 2012AA012202 and 2013AA031401), the National Basic Research Program of China (Grant No. 2012CB933503), and the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61021003).

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

Liu Shao-Qing (刘少卿), Yang Xiao-Hong (杨晓红), Liu Yu (刘宇), Li Bin (李彬), Han Qin (韩勤)   

  1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2013-02-06 Revised:2013-03-22 Online:2013-08-30 Published:2013-08-30
  • Contact: Yang Xiao-Hong, Han Qin E-mail:xhyang@semi.ac.cn;hanqin@red.semi.ac.cn
  • Supported by:
    Project supported by the High Technology Research and Development Program of China (Grant Nos. 2012AA012202 and 2013AA031401), the National Basic Research Program of China (Grant No. 2012CB933503), and the National Natural Science Foundation of China (Grant Nos. 61176053, 61274069, and 61021003).

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摘要： In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

关键词: high-performance, diluted waveguide, evanescent coupling, waveguide photodiode

Abstract: In this paper, we present the design, fabrication, and measurement of an evanescently coupled waveguide photodetector operating at 1.55 μm, which mainly comprises a diluted waveguide, a single-mode rib waveguide and a p-i-n photodiode with an extended optical matching layer. The optical characteristics of this structure are studied by using a three-dimensional finite-difference time-domain (3D FDTD) method. The photodetector exhibits a high 3-dB bandwidth of more than 35 GHz and a responsivity of 0.291 A/W at 1550 nm directly coupled with a cleaved fiber. Moreover, a linear response of more than 72-mW optical power is achieved, where a photocurrent of more than 21 mA is obtained at a reverse bias voltage of 3 V.

Key words: high-performance, diluted waveguide, evanescent coupling, waveguide photodiode

中图分类号:  (Photodiodes; phototransistors; photoresistors)

  • 85.60.Dw
42.81.Qb (Fiber waveguides, couplers, and arrays) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)