中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98107-098107.doi: 10.1088/1674-1056/22/09/098107

所属专题： TOPICAL REVIEW — Low-dimensional nanostructures and devices

• TOPICAL REVIEW—Low-dimensional nanostructures and devices • 上一篇    下一篇

Unique electrical properties of nanostructured diamond cones

顾长志a, 王强b, 李俊杰a, 夏钶c   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    b Department of Applied Physics, Harbin Institute of Technology at Weihai, Weihai 264209, China;
    c Department of Physics, Beijing Normal University, Beijing 100875, China
  • 收稿日期:2013-08-02 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51272278, 11174362, and 91023041), the National Basic Research Program of China (Grant No. 2009CB930502), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W02).

Unique electrical properties of nanostructured diamond cones

Gu Chang-Zhi (顾长志)a, Wang Qiang (王强)b, Li Jun-Jie (李俊杰)a, Xia Ke (夏钶)c   

  1. a Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    b Department of Applied Physics, Harbin Institute of Technology at Weihai, Weihai 264209, China;
    c Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:2013-08-02 Online:2013-07-26 Published:2013-07-26
  • Contact: Gu Chang-Zhi, Li Jun-Jie E-mail:czgu@iphy.ac.cn; jjli@iphy.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51272278, 11174362, and 91023041), the National Basic Research Program of China (Grant No. 2009CB930502), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W02).

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摘要： The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching process and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition (HFCVD) system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH4/H2 ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possibility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.

关键词: diamond, nanocone, quantum device

Abstract: The preparation and electrical properties of diamond nanocones are reviewed, including a maskless etching process and mechanism of large-area diamond conical nanostructure arrays using a hot filament chemical vapor deposition (HFCVD) system with negatively biased substrates, and the field electron emission, gas sensing, and quantum transport properties of a diamond nanocone array or an individual diamond nanocone. Optimal cone aspect ratio and array density are investigated, along with the relationships between the cone morphologies and experimental parameters, such as the CH4/H2 ratio of the etching gas, the bias current, and the gas pressure. The reviewed experiments demonstrate the possibility of using nanostructured diamond cones as a display device element, a point electron emission source, a gas sensor or a quantum device.

Key words: diamond, nanocone, quantum device

中图分类号:  (Diamond)

  • 81.05.ug
81.07.-b (Nanoscale materials and structures: fabrication and characterization) 73.63.Rt (Nanoscale contacts)