中国物理B ›› 2012, Vol. 21 ›› Issue (9): 98502-098502.doi: 10.1088/1674-1056/21/9/098502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Microwave damage susceptibility trend of bipolar transistor as a function of frequency

马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌, 宋坤, 赵颖博   

  1. School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 收稿日期:2012-03-04 修回日期:2012-04-05 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Microwave damage susceptibility trend of bipolar transistor as a function of frequency

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Chen Bin (陈斌), Song Kun (宋坤), Zhao Ying-Bo (赵颖博)   

  1. School of Microelectronics, Xidian University, Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2012-03-04 Revised:2012-04-05 Online:2012-08-01 Published:2012-08-01
  • Contact: Ma Zhen-Yang E-mail:zyma@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

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摘要： We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n+ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and the frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

关键词: bipolar transistor, high-power microwave, frequency

Abstract: We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n+ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and the frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

Key words: bipolar transistor, high-power microwave, frequency

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
84.40.-x (Radiowave and microwave (including millimeter wave) technology)