Analytical model of signal amplification in silicon waveguides

doi:10.1088/1674-1056/21/7/074207

中国物理B ›› 2012, Vol. 21 ›› Issue (7): 74207-074207.doi: 10.1088/1674-1056/21/7/074207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Analytical model of signal amplification in silicon waveguides

孟凡, 余重秀, 苑金辉

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Post and Telecommunications, Beijing 100876, China

收稿日期:2011-11-16 修回日期:2012-01-02 出版日期:2012-06-01 发布日期:2012-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327605), the Discipline Co-construction Project of Beijing Municipal Commission of Education, China (Grant No. YB20081001301), and the Fundamental Research Funds for Central Universities, China (Grant No. 2011RC008).

Analytical model of signal amplification in silicon waveguides

Meng Fan(孟凡)^†, Yu Chong-Xiu(余重秀), and Yuan Jin-Hui(苑金辉)

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Post and Telecommunications, Beijing 100876, China

Received:2011-11-16 Revised:2012-01-02 Online:2012-06-01 Published:2012-06-01
Contact: Meng Fan E-mail:mengfan3426@gmail.com
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2010CB327605), the Discipline Co-construction Project of Beijing Municipal Commission of Education, China (Grant No. YB20081001301), and the Fundamental Research Funds for Central Universities, China (Grant No. 2011RC008).

摘要/Abstract

摘要： In this paper, an analytical model to investigate the parametric amplification (PA) and the PA + stimulated Raman scattering (SRS) in silicon waveguides is put forward. When two pump signals are employed, the PA bandwidth of the probe signal is so large that the Raman contribution has to be considered. When Raman contribution fraction f is set to be 0, only the PA occurs to amplify the probe signal, and when f is set to be 0.043, the PA and the SRS amplify the probe signal at the same time. The signal amplifications of both single and dual pump schemes are investigated by using this model. With this model, three main affecting factors, i.e., zero dispersion wavelength (ZDWL), third-order dispersion (TOD), and fourth-order dispersion (FOD), are discussed in detail.

关键词: parametric amplification, stimulated Raman scattering, silicon waveguides, Raman contribution fraction

Abstract: In this paper, an analytical model to investigate the parametric amplification (PA) and the PA + stimulated Raman scattering (SRS) in silicon waveguides is put forward. When two pump signals are employed, the PA bandwidth of the probe signal is so large that the Raman contribution has to be considered. When Raman contribution fraction f is set to be 0, only the PA occurs to amplify the probe signal, and when f is set to be 0.043, the PA and the SRS amplify the probe signal at the same time. The signal amplifications of both single and dual pump schemes are investigated by using this model. With this model, three main affecting factors, i.e., zero dispersion wavelength (ZDWL), third-order dispersion (TOD), and fourth-order dispersion (FOD), are discussed in detail.

Key words: parametric amplification, stimulated Raman scattering, silicon waveguides, Raman contribution fraction

中图分类号: (Optical parametric oscillators and amplifiers)

42.65.Yj

42.82.Et (Waveguides, couplers, and arrays) 42.65.Dr (Stimulated Raman scattering; CARS)

孟凡, 余重秀, 苑金辉 . Analytical model of signal amplification in silicon waveguides[J]. 中国物理B, 2012, 21(7): 74207-074207.

Meng Fan(孟凡), Yu Chong-Xiu(余重秀), and Yuan Jin-Hui(苑金辉) . Analytical model of signal amplification in silicon waveguides[J]. Chin. Phys. B, 2012, 21(7): 74207-074207.

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Analytical model of signal amplification in silicon waveguides

Analytical model of signal amplification in silicon waveguides

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