Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

doi:10.1088/1674-1056/21/5/057201

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 57201-057201.doi: 10.1088/1674-1056/21/5/057201

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

段宝兴¹ ²,杨银堂¹ ²

a. School of Microelectronics, Xidian University, Xi'an 710071, China;
b. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China

收稿日期:2011-09-13 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076).

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Duan Bao-Xing(段宝兴)^a)b)† and Yang Yin-Tang(杨银堂)^a)b)

1. School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China

Received:2011-09-13 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076).

摘要/Abstract

摘要： In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.

关键词: AlGaN/GaN, high electron mobility transistors (HEMTs), two-dimensional electron gas (2DEG), electric field modulation

Abstract: In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.

Key words: AlGaN/GaN, high electron mobility transistors (HEMTs), two-dimensional electron gas (2DEG), electric field modulation

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

72.80.Ga (Transition-metal compounds) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

段宝兴, 杨银堂. Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer[J]. 中国物理B, 2012, 21(5): 57201-057201.

Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) . Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer[J]. Chin. Phys. B, 2012, 21(5): 57201-057201.

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Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

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