boldmath In situ high temperature X-ray diffraction studies of ZnO thin film

doi:10.1088/1674-1056/20/9/096102

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 96102-096102.doi: 10.1088/1674-1056/20/9/096102

boldmath In situ high temperature X-ray diffraction studies of ZnO thin film

陈香存, 周解平, 王海洋, 徐彭寿, 潘国强

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

收稿日期:2011-02-24 修回日期:2011-03-27 出版日期:2011-09-15 发布日期:2011-09-15

In situ high temperature X-ray diffraction studies of ZnO thin film

Chen Xiang-Cun(陈香存), Zhou Jie-Ping(周解平), Wang Hai-Yang(王海洋), Xu Peng-Shou(徐彭寿), and Pan Guo-Qiang(潘国强)^†

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Received:2011-02-24 Revised:2011-03-27 Online:2011-09-15 Published:2011-09-15

摘要/Abstract

摘要： An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction (XRD) patterns of the film show strong c-axis oriented crystal structure with preferred (002) orientation. The Phi-scan XRD pattern confirms that the epitaxial ZnO exhibits a single-domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and (002) peaks shift systematically toward lower 2θ values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.

关键词: high temperature XRD, ZnO thin films, lattice parameters, pulsed laser deposition

Abstract: An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction (XRD) patterns of the film show strong c-axis oriented crystal structure with preferred (002) orientation. The Phi-scan XRD pattern confirms that the epitaxial ZnO exhibits a single-domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and (002) peaks shift systematically toward lower 2θ values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.

Key words: high temperature XRD, ZnO thin films, lattice parameters, pulsed laser deposition

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

61.05.cp (X-ray diffraction) 68.35.-p (Solid surfaces and solid-solid interfaces: structure and energetics)

陈香存, 周解平, 王海洋, 徐彭寿, 潘国强. boldmath In situ high temperature X-ray diffraction studies of ZnO thin film[J]. 中国物理B, 2011, 20(9): 96102-096102.

Chen Xiang-Cun(陈香存), Zhou Jie-Ping(周解平), Wang Hai-Yang(王海洋), Xu Peng-Shou(徐彭寿), and Pan Guo-Qiang(潘国强) . In situ high temperature X-ray diffraction studies of ZnO thin film[J]. Chin. Phys. B, 2011, 20(9): 96102-096102.

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boldmath In situ high temperature X-ray diffraction studies of ZnO thin film

In situ high temperature X-ray diffraction studies of ZnO thin film

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