中国物理B ›› 2011, Vol. 20 ›› Issue (6): 67102-067102.doi: 10.1088/1674-1056/20/6/067102

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Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques

李欣然1, 张发生2   

  1. (1)College of Electrical and Information Engineering, Hunan University, Changsha 410082, China; (2)School of Computer and Information Engineering, Central South University of Forestry and Technology, Changsha 410004, China;College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
  • 收稿日期:2010-12-10 修回日期:2011-01-26 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the Science and Technology Foundation of Hunan Province of China (Grant No. 2008FJ3102).

Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques

Zhang Fa-Sheng (张发生)a,  Li Xin-Ran (李欣然)b    

  1. a School of Computer and Information Engineering, Central South University of Forestry and Technology, Changsha 410004, China; b College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
  • Received:2010-12-10 Revised:2011-01-26 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the Science and Technology Foundation of Hunan Province of China (Grant No. 2008FJ3102).

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摘要： The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3×10-5 A/cm2.

关键词: silicon carbide, P-i-N diode, junction termination technique, simulation, breakdown voltage

Abstract: The planar edge termination techniques of junction termination extension (JTE) and offset field plates and field-limiting rings for the 4H-SiC P-i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3×10-5 A/cm2.

Key words: silicon carbide, P-i-N diode, junction termination technique, simulation, breakdown voltage

中图分类号:  (Semiconductor compounds)

  • 71.20.Nr
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Kk (Junction diodes) 78.40.Fy (Semiconductors)