Photoemission of graded-doping GaN photocathode

doi:10.1088/1674-1056/20/3/037902

中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37902-037902.doi: 10.1088/1674-1056/20/3/037902

Photoemission of graded-doping GaN photocathode

常本康¹, 王晓晖¹, 李飙¹, 杜玉杰¹, 张俊举¹, 付小倩²

(1)Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; (2)Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;School of Information Science and Engineering, University of Jinan, Jinan 250022, China

收稿日期:2010-07-01 修回日期:2010-10-11 出版日期:2011-03-15 发布日期:2011-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60871012) and the Research Fund of Nanjing University of Science and Technology (Grant No. 2010ZYTS032).

Photoemission of graded-doping GaN photocathode

Fu Xiao-Qian(付小倩)^a)b), Chang Ben-Kang(常本康)^a)†, Wang Xiao-Hui(王晓晖)^a), Li Biao(李飙)^a), Du Yu-Jie(杜玉杰)^a), and Zhang Jun-Ju(张俊举)^a)

^a Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China; ^b School of Information Science and Engineering, University of Jinan, Jinan 250022, China

Received:2010-07-01 Revised:2010-10-11 Online:2011-03-15 Published:2011-03-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60871012) and the Research Fund of Nanjing University of Science and Technology (Grant No. 2010ZYTS032).

摘要/Abstract

摘要： We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10¹⁷ cm^-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.

关键词: GaN photocathode, graded-doping, photoemission, quantum efficiency

Abstract: We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons, which results in the enhancement of quantum efficiency. The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated. To prevent negative differential mobility from appearing, the surface doping concentration needs to be optimized, and it is calculated to be 3.19×10¹⁷ cm^-3. The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.

Key words: GaN photocathode, graded-doping, photoemission, quantum efficiency

中图分类号: (Photoemission and photoelectron spectra)

79.60.-i

61.72.U- (Doping and impurity implantation) 85.60.Ha (Photomultipliers; phototubes and photocathodes)

付小倩, 常本康, 王晓晖, 李飙, 杜玉杰, 张俊举. Photoemission of graded-doping GaN photocathode[J]. 中国物理B, 2011, 20(3): 37902-037902.

Fu Xiao-Qian(付小倩), Chang Ben-Kang(常本康), Wang Xiao-Hui(王晓晖), Li Biao(李飙), Du Yu-Jie(杜玉杰), and Zhang Jun-Ju(张俊举). Photoemission of graded-doping GaN photocathode[J]. Chin. Phys. B, 2011, 20(3): 37902-037902.

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Photoemission of graded-doping GaN photocathode

Photoemission of graded-doping GaN photocathode

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