Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

doi:10.1088/1674-1056/20/11/117301

中国物理B ›› 2011, Vol. 20 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/20/11/117301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

陈丰平¹, 张玉明¹, 张义门¹, 汤晓燕¹, 王悦湖¹, 陈文豪²

(1)School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2011-03-30 修回日期:2011-05-03 出版日期:2011-11-15 发布日期:2011-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

Chen Feng-Ping(陈丰平)^a)†, Zhang Yu-Ming(张玉明)^a), Zhang Yi-Men(张义门)^a), Tang Xiao-Yan(汤晓燕)^a), Wang Yue-Hu(王悦湖)^a), and Chen Wen-Hao(陈文豪)^b)

^a School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2011-03-30 Revised:2011-05-03 Online:2011-11-15 Published:2011-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61006060) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No. 2008ZDKG-30).

摘要/Abstract

摘要： The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm². A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm² under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm².

Abstract: The 4H-SiC junction barrier Schottky (JBS) diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ·cm². A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm² under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 ℃-200 ℃. The diode shows a stable Schottky barrier height of up to 200 ℃ and a stable operation under a continuous forward current of 100 A/cm².

Key words: 4H-SiC, junction barrier Schottky, offset field plate, electrical characteristics

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

73.40.-c (Electronic transport in interface structures) 85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.Kk (Junction diodes)

陈丰平, 张玉明, 张义门, 汤晓燕, 王悦湖, 陈文豪. Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode[J]. 中国物理B, 2011, 20(11): 117301-117301.

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪) . Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode[J]. Chin. Phys. B, 2011, 20(11): 117301-117301.

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Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode

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