中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47310-47310.doi: 10.1088/1674-1056/19/4/047310

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

王楷群1, 菅傲群1, 张斌珍1, 李秋柱2, 刘鑫2   

  1. (1)Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan {\rm 030051, China; (2)National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
  • 收稿日期:2009-07-29 修回日期:2009-08-14 出版日期:2010-04-15 发布日期:2010-04-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos.~50775209 and 50730009).

Pressure effect study on the I－V property of the GaAs-based resonant tunnelling structure by photoluminescence measurement

Li Qiu-Zhu(李秋柱)b), Wang Kai-Qun(王楷群) a)†, Jian Ao-Qun(菅傲群)a), Liu Xin(刘鑫)b), and Zhang Bin-Zhen(张斌珍) a)   

  1. a Key Laboratory of Instrumentation Science and Dynamic Measurement (North University of China), Ministry of Education, Taiyuan 030051, China; b National Key Laboratory for Electronic Measurement Technology, North University of China, Taiyuan 030051, China
  • Received:2009-07-29 Revised:2009-08-14 Online:2010-04-15 Published:2010-04-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos.~50775209 and 50730009).

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摘要： This paper discusses the $I$--$V$ property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the $I$--$V$ curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.

Abstract: This paper discusses the $I$--$V$ property of the GaAs-based resonant tunnelling structure (RTS) under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke's law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the $I$--$V$ curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.

Key words: resonant tunnelling structure, $I$--$V$ curve, photoluminescence measurement, peak shift, peak split, full width at half maximum broadening

中图分类号:  (Junction breakdown and tunneling devices (including resonance tunneling devices))

  • 85.30.Mn
85.30.Kk (Junction diodes) 78.55.Cr (III-V semiconductors)