Characterization of ion-implanted 4H-SiC Schottky barrier diodes

doi:10.1088/1674-1056/19/1/017203

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 17203-017203.doi: 10.1088/1674-1056/19/1/017203

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

张岩¹, 王守国², 张义门³, 张玉明³

(1)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; (2)Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China;School of Information Science and Technology, Northwest University, Xi'an 710127, China; (3)School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2009-03-19 修回日期:2009-05-08 出版日期:2010-01-15 发布日期:2010-01-15

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

Wang Shou-Guo(王守国)^a)c)^†, Zhang Yan(张岩)^a), Zhang Yi-Men(张义门)^b), and Zhang Yu-Ming(张玉明)^b)

^a Department of Electronic and Information Engineering, Harbin Institute of Technology Shenzhen Graduate School, Shenzhen 518055, China; ^b School of Microelectronics, Xidian University, Xi'an 710071, China; ^cSchool of Information Science and Technology, Northwest University, Xi'an 710127, China

Received:2009-03-19 Revised:2009-05-08 Online:2010-01-15 Published:2010-01-15

摘要/Abstract

摘要： Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I--V and C--V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I--V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal--semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I--V and C--V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R_\rm s are 11.9 and 1.0~kΩ respectively. The values of barrier height φ _\rm B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14 and 0.93 eV obtained by the C--V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2\% and 4\% respectively extracted from C--V testing results.

Abstract: Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I--V and C--V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I--V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal--semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I--V and C--V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance $R_{\rm s}$ are 11.9 and 1.0 kΩ respectively. The values of barrier height $\phi _{\rm B}$ of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I--V method and 1.14 and 0.93 eV obtained by the C--V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C--V testing results.

Key words: silicon carbide, ion-implantation, Schottky barrier diodes, barrier height

中图分类号: (Defects and impurities: doping, implantation, distribution, concentration, etc.)

68.55.Ln

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.Kk (Junction diodes) 85.30.Tv (Field effect devices)

王守国, 张岩, 张义门, 张玉明. Characterization of ion-implanted 4H-SiC Schottky barrier diodes[J]. 中国物理B, 2010, 19(1): 17203-017203.

Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) . Characterization of ion-implanted 4H-SiC Schottky barrier diodes[J]. Chin. Phys. B, 2010, 19(1): 17203-017203.

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Characterization of ion-implanted 4H-SiC Schottky barrier diodes

Characterization of ion-implanted 4H-SiC Schottky barrier diodes

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