中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3409-3413.doi: 10.1088/1674-1056/18/8/047

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Dielectronic recombination of Co-like tantalum

周莉, 孟凡昌, 黄敏, 陈重阳, 王炎森   

  1. The Key Laboratory of Applied Ion Beam Physics, the Ministry of Education, Shanghai 200433, China;Shanghai EBIT Laboratory, Modern Physics Institute, Fudan University, Shanghai 200433, China
  • 收稿日期:2008-09-25 修回日期:2008-11-04 出版日期:2009-08-20 发布日期:2009-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10574029) and the Chinese Association of Atomic and Molecular Data and National High-Tech ICF Committee in China. It is also partially supported by Shanghai Leading Academic Discipline Project (Grant No B107).

Dielectronic recombination of Co-like tantalum

Zhou Li(周莉)a)b), Meng Fan-Chang(孟凡昌)a)b), Huang Min(黄敏)a)b), Chen Chong-Yang(陈重阳)a)b)† , and Wang Yan-Sen(王炎森)a)b)   

  1. a The Key Laboratory of Applied Ion Beam Physics, the Ministry of Education, Shanghai 200433, China; b  Shanghai EBIT Laboratory, Modern Physics Institute, Fudan University, Shanghai 200433, China
  • Received:2008-09-25 Revised:2008-11-04 Online:2009-08-20 Published:2009-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10574029) and the Chinese Association of Atomic and Molecular Data and National High-Tech ICF Committee in China. It is also partially supported by Shanghai Leading Academic Discipline Project (Grant No B107).

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摘要： Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state of Co-like tantalum is performed using the relativistic distorted-wave approximation with configuration interaction. The contributions to the total DR rate coefficients are explicitly calculated from the complexes of Ni-like tantalum: 3s23p63d3/23 3d5/26 n'l', 3s23p53d10n'l', 3s3p63d10n'l', 3s23p63d84ln'l', 3s23p53d94ln'l' and 3s3p63d94ln'l' with n' ≤ 25, and 3s23p63d85ln'l' with n' ≤ 9. The l' and n' dependences of partial DR rate coefficients are investigated. The contributions from higher n'complexes are evaluated by a level-by-level extrapolation method. The total DR rate coefficients mainly come from the complex series 3s23p63d84ln'l', 3s23p53d94ln'l' and are fitted to an empirical formula with high accuracy. Comparison of the present results with those of other works shows that the previously published data underestimate significantly the DR rates of Co-like tantalum.

Abstract: Ab initio calculation of the total dielectronic recombination (DR) rate coefficient from the ground state of Co-like tantalum is performed using the relativistic distorted-wave approximation with configuration interaction. The contributions to the total DR rate coefficients are explicitly calculated from the complexes of Ni-like tantalum: 3s23p63d3/23 3d5/26 n'l', 3s23p53d10n'l', 3s3p63d10n'l', 3s23p63d84ln'l', 3s23p53d94ln'l' and 3s3p63d94ln'l' with n' ≤ 25, and 3s23p63d85ln 'l ' with n' ≤ 9. The l ' and n ' dependences of partial DR rate coefficients are investigated. The contributions from higher n'complexes are evaluated by a level-by-level extrapolation method. The total DR rate coefficients mainly come from the complex series 3s23p63d84ln 'l ', 3s23p53d94ln 'l ' and are fitted to an empirical formula with high accuracy. Comparison of the present results with those of other works shows that the previously published data underestimate significantly the DR rates of Co-like tantalum.

Key words: dielectronic recombination, rate coefficient, Co-like tantalum

中图分类号:  (Recombination, attachment, and positronium formation)

  • 34.80.Lx
31.15.ve (Electron correlation calculations for atoms and ions: ground state) 31.30.J- (Relativistic and quantum electrodynamic (QED) effects in atoms, molecules, and ions)